
Bi2Se3 growth, an ARPES spectrum and a topological
(a) An AFM image of an MBE-grown Bi2Se3 thin film with terrace size exceeding 500 nm. (b) A streaky RHEED pattern along the direction of the as-grown surface of Bi2Se3, indicating a 2-D...
Synthesis, characterization and optoelectronic application of Bi2Se3 ...
Feb 1, 2023 · Atomic Force Microscopy (AFM) was used to investigate the surface topography of synthesized thin film with extremely high magnification (i.e. 1,000,000) and very accurate resolution (i.e. 100 μm to < 1 μm).
Synthesis and Quantum Transport Properties of Bi2Se3 …
Feb 12, 2013 · These nanostructures were found to have high quality through systematical characterizations by scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS), atomic force...
Large scale AFM images of Bi 2 Se 3 thin films grown on
In the present study, the structural, morphological, compositional, nanomechanical, and surface wetting properties of Bi2Se3 thin films prepared using a stoichiometric Bi2Se3 target and a...
AFM images of Bi2Se3 on mica with an amorphous buffer
Raman spectroscopy measurements revealed the pure rhombohedral phase of Bi2Se3 thin films. These films possess truncated hexagonal morphology, and elemental analysis showed stoichiometric...
Vapor growth of Bi2Se3 and Bi2O2Se crystals on mica
Sep 1, 2020 · The structure, surface morphology and thickness of grown films were analyzed using an atomic force microscope (AFM) Solver PRO NT-MDT in contact or semi-contact modes. The X-ray diffraction pattern from the substrate surface was obtained by the arlx'TRA POWbyDER analyzer (CuKα radiation).
In this paper, we report the first controlled mechanical exfoliation of Bi2Se3 nanoribbons (>50 QLs) by an atomic force microscope (AFM) tip down to a single QL. Microwave impedance microscopy is employed to map out the local conductivity of such ultrathin nanoribbons, showing drastic difference in sheet resistance between 1-2 QLs and 4-5 QLs.
Self-assembled Bismuth Selenide (Bi2Se3) quantum dots …
Mar 4, 2019 · In this work we demonstrate a viable method to create self-assembled quantum dots of Bi 2 Se 3 by molecular beam epitaxy based on the droplet epitaxy technique. The samples were grown in a...
Growth of high-quality Bi2Se3 topological insulators using (Bi1 …
Jan 30, 2018 · We present atomic force microscopy (AFM) and x-ray diffraction (XRD) data showing the high quality of our BIS buffers. Finally, we discuss Bi 2 Se 3 films grown on BIS buffers and demonstrate a reduced trivial bulk carrier density with a commensurate increase in mobility, indicating that the use of BIS as a virtual substrate for the growth of ...
(a) Two dimensional AFM image of Bi2Se3 thin film; (b) The ...
In this literature, we establish the variation in structural, elemental, magnetic, and magneto-transport properties of Bi2Se3 due to the influence of Fe-doping. A solid-state synthesis mechanism...
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