NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...

V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...

However, these power-handling advantages come at a cost. SiC power MOSFETs can cost up to 3X more than the IGBTs currently used throughout the EV. The price difference is driven by the complexity ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

These features make them suited for three-phase inverter drive applications such as electronically commutated (EC) fans in AI data centers, heat pumps, commercial HVAC systems, servo motors, robotics, ...

onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

For some SiC MOSFETs, which commonly feature higher voltage ... However, there are cost-cutting designs that reduce the negative voltage applied to the gate when the IGBTs are turned off, and in these ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power ...

that incorporates an active Miller clamp function for driving silicon carbide (SiC) MOSFETs. Volume shipments start today. In circuits such as inverters, where MOSFETs or IGBTs are used in series ...