NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to ...

onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

In circuits such as inverters, where MOSFETs or IGBTs are used in series, gate voltage can be generated by a Miller current ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

However, their historically lower short-circuit robustness compared to silicon-based IGBTs has posed challenges ... significantly extends the SCWT of SiC MOSFETs to a minimum of 5 µs (Fig.

ICeGaN ICs have been proven to be very robust and IGBTs have a long and proven track record in traction and EV applications. Similar, proprietary parallel combinations of ICeGaN devices with SiC ...

For some SiC MOSFETs, which commonly feature higher voltage ... that reduce the negative voltage applied to the gate when the IGBTs are turned off, and in these cases, gate drivers with a built ...

that incorporates an active Miller clamp function for driving silicon carbide (SiC) MOSFETs. Volume shipments start today. In circuits such as inverters, where MOSFETs or IGBTs are used in series ...