Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

The essence of the problem of bad money in domestic SiC silicon carbide MOSFET In order to pursue the specific on-resistance ...

NoMIS Power's latest advancement significantly extends the SCWT of SiC MOSFETs to a minimum of 5 µs, compared to the current ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC MOSFETs. Its built-in clamp circuit directs Miller current from the gate to ...

In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to ...

For some SiC MOSFETs, which commonly feature higher voltage, lower on-resistance and faster switching characteristics than silicon (Si) MOSFETs, sufficient negative voltage cannot be applied ...

By tuning the trade-off between Ron,sp and SCWT using NoMIS Power's proprietary SiC MOSFET fabrication design and process flow, the performance shown in Fig. 1 & Fig. 2 was achieved; and can be ...

MALVERN, Pa., March 11, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today announced that at the Applied Power Electronics Conference and Exposition (APEC) 2025, the company ...