SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of ...

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...

V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...

The essence of the problem of bad money in domestic SiC silicon carbide MOSFET In order to pursue the specific on-resistance ...

The DNA of tech® is a registered trademark of Vishay Intertechnology, Inc. MaxSiC™ is a trademark of MaxPower Semiconductor, Inc. Registration pending. IHLE, ThermaWick, Power Metal Strip and eSMP are ...

NoMIS Power's latest advancement significantly extends the SCWT of SiC MOSFETs to a minimum of 5 µs (Fig. 1), compared to the current industry standard of 2-3 µs, with no deleterious effect on ...

The power module packaging materials market will reach almost $6.1 billion by 2030 with  a CAGR of almost 11% between 2024 ...

SMA America is expanding its large-scale storage portfolio with the Sunny Central Storage UP-S battery inverter, now available in the U.S. Designed for ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).