SemiQās 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.
NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...
Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ātrench-assisted planarā technology: Enabled by over 20 years of SiC innovation leadership, GeneSiCā¢ technology leads on ...
Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ātrench-assisted planarā technology: Enabled by over 20 years of SiC innovation leadership, GeneSiCā¢ technology leads on ...
āNavitasā GeneSiC power devices, based on trench-assisted planar-gate SiC MOSFET technology, can operate at high temperatures and high speeds, resulting in up to 25 C lower case temperature ...
Detailed price information for Navitas Semiconductor Corp (NVTS-Q) from The Globe and Mail including charting and trades.
Featuring high-power GaNSafeā¢ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance ...
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