V SiC MOSFET based SPM 31 IPMs. These IPMs deliver the highest energy efficiency and power density in the smallest form factor compared to utilising Field Stop 7 IGBT technology, resulting in lower ...

onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

The MOSFETs with top-side cooling provide better cooling, easy setup, and reliable performance for industrial use and EV ...

SemiQ 1200V SiC full-bridge modules The modules have been developed to simplify ... and are housed in a 62.8 x 33.8 x 15.0mm package (including mounting plates) with press fit terminal connections and ...

These features make them suited for three-phase inverter drive applications such as electronically commutated (EC) fans in AI data centers, heat pumps, commercial HVAC systems, servo motors, robotics, ...

The modules integrate two low-loss, high-speed switching SiC MOSFETs with reliable body ... They’re housed in a 62.8- × 33.8- × 15.0-mm package (including mounting plates) with press-fit ...

Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).

It puts SiC MOSFETs and silicon IGBTs in a single package. The new plug-and-play module is all about striking a balance between the power efficiency of SiC and the cost efficiency of silicon ...

To Address the Latest Trends in Power Electronics, Company to Showcase MaxSiC™ Series SiC MOSFETs Alongside Broad Portfolio ...

Vishay Intertechnology has announced that its newly released 1200V MaxSiC SiC MOSFETs will take centre stage at the Applied Power Electronics Conference and Exposition (APEC) 2025, March 16-20 in ...