Nexperia’s new X.PAK packaging combines high thermal performance, compact size, and easy assembly for high-power applications ...

This article highlights effective design practices for gallium nitride (GaN) half-bridge converters driven by a 100 V ...

Power MOSFET Market. The Power MOSFET market would become hugely successful and is predicted to reach a market value of USD 30.55 billion by 2025, before hitting USD 74.35 billion ...

Today, SiC accounts for the majority of the revenue generated by compound semiconductor power electronics, and sales are forecast to continue to climb, as many of the leading suppliers expand their ...

branded ‘ICeGaN’, to modify the gate behaviour of GaN power transistors, without using cascode-pairing, to make them compatible with drivers made for traditional silicon mosfets. At the same time, it ...

Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100V eGaN FET that delivers superior performance, higher efficiency, and lower system costs for power conversion ...

The latest graphics processing units (GPUs), such as the Blackwell B100 and B200 at the heart of NVIDIA’s latest AI ...

It is “a design that can be used to compare the real-life performance of various high power IGBT, 1st and 2nd generation SiC, GaN, mosfet and cascode switching technologies”, said the firm. “As the ...

Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in ...